The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries. With GaN4AP project 36 European industries and research institutions, from six Countries, will support activities aimed to lay the foundation for the manufacture of the next-generation power electronic technology in Europe and in the world. The vast market size gap between EU and Asia can be drastically reduced if the project will reach the expected target.

The workshop will present ways to develop innovative power electronic systems for power conversion and management, with advanced architecture and "state-of-the-art" GaN based high mobility transistor (HEMT) based circuit topology, available in a newly developed high-frequency package, which can achieve power conversion efficiency close to 99%.

It will also deal with the prospects for using innovative technologies:

1. A new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and monolithic variances, which will allow the design of novel E-Mobility power converters;
2. A new semiconductor material system: the aluminum scandium nitride, AlScN, which, combined with advanced process and growth solutions, can also provide exceptional physical properties for highly efficient power transistors;
3. A new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 100A, 1200V.